Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5362217 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠We employed ZnO film as buffer layer to improve resistive switching characteristics. ⺠The operation voltages were very low. ⺠A high-voltage forming process in initial state was not required.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jian-Wei Zhao, Jian Sun, Hai-Qin Huang, Feng-Juan Liu, Zuo-Fu Hu, Xi-Qing Zhang,