| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362230 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠We investigate the epitaxial graphene grown on SiC. ⺠Spatial variation of the number of graphene layers is measured by a low-energy electron microscope. ⺠The number of graphene layers is greater near scratched areas of SiC substrate. ⺠The thicker graphene areas can also extend significantly away from the edges of the scratch. ⺠This finding can be implemented as an additional technique for spatially modulating graphene thickness.
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Authors
J. Osaklung, C. Euaruksakul, W. Meevasana, P. Songsiriritthigul,