Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5362307 | Applied Surface Science | 2010 | 4 Pages |
Abstract
A metal-semiconductor-metal photoconductive detector was fabricated on c-axis preferred oriented Ga-doped ZnO (ZnO:Ga) thin film prepared on quartz by radio-frequency magnetron sputtering. With a 10Â V bias, a responsivity of about 2.6Â A/W at 370Â nm was obtained in the ultraviolet region. The photocurrent increases linearly with incident power density for more than two orders of magnitude. The transient response measurement revealed photoresponse with a rise time of 10Â ns and a fall time of 960Â ns, respectively. The results are much faster than those reported in photoconductive detectors based on unintentionally doped n-type ZnO films.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jian Sun, Feng-Juan Liu, Hai-Qin Huang, Jian-Wei Zhao, Zuo-Fu Hu, Xi-Qing Zhang, Yong-Sheng Wang,