Structural, electrical and optical properties of Ga-doped ZnO films on PET substrate

The effects of O2 plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. Ga-doped ZnO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion of PET substrate, O2 plasma pretreatment process was used prior to GZO sputtering. With increasing O2 plasma treatment time, the contact angle decreases and the RMS surface roughness increases significantly. The transmittance of GZO films on PET substrate in a wavelength of 550 nm was 70-84%. With appropriate O2 plasma treatment, the resistivity of GZO films on PET substrate was 3.4 × 10−3 Ω cm.