| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362334 | Applied Surface Science | 2010 | 4 Pages |
Abstract
ZnO nanowires with different arsenic concentration were grown on Si (1Â 0Â 0) substrates by chemical vapor deposition method without using catalyst. Zn/GaAs mixed powders were used as Zn and As source, respectively. Oxygen was used as oxidant. The images of scanning electron microscope show that the arsenic-doped ZnO nanowires with preferred c-axial orientation were obtained, which is in well accordance with the X-ray diffraction analysis. The arsenic related acceptor emission was observed in the photoluminescence spectra at 11Â K for all arsenic-doped ZnO samples. This method for the preparation of arsenic-doped ZnO nanowires may open the way to realize the ZnO nanowires based light-emitting diode and laser diode.
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Authors
Q.J. Feng, L.Z. Hu, H.W. Liang, Y. Feng, J. Wang, J.C. Sun, J.Z. Zhao, M.K. Li, L. Dong,