Chemical, energetic, and geometric heterogeneity of device-quality (1Â 0Â 0) surfaces of single crystalline silicon after HFaq etching

An analysis, based on angle-resolved X-ray photoelectron spectroscopy, multiple-internal-reflection infrared spectroscopy, and atomic force microscopy, of device-quality (1 0 0)silicon surfaces after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH2and SiH3 terminations, but contains sub-stoichiometric oxidized silicon. The analysis shows moreover the existence of a form of reduced silicon, not consistent with the currently accepted picture of the native HFaq-etched surface.