Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5362390 | Applied Surface Science | 2008 | 6 Pages |
Abstract
Highly conducting and transparent aluminum-doped CdO thin films were deposited on quartz by ablating the sintered target of CdO containing 2 wt% of aluminum with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of oxygen partial pressure on structural, electrical, and optical properties was studied. It is observed that the (2 0 0) plane is highly preferred for the films grown under high oxygen pressure. The conductivity, carrier concentration and mobility of the films decrease with increase in the oxygen pressure after attaining maximum. Low resistivity (2.27 Ã 10â5 Ω cm), and high mobility (79 cm2 Vâ1 sâ1) is observed for the film grown under oxygen pressure of 1.0 Ã 10â3 mbar. The optical band gap is found varying between 2.68 and 2.90 eV for various oxygen pressure.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
R.K. Gupta, K. Ghosh, R. Patel, S.R. Mishra, P.K. Kahol,