Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Raman scattering analysis is used to study the residual stress in metal-induced crystallized amorphous silicon thin film. The influence of the crystallization parameters on thin film properties is investigated as a function of annealing temperature, annealing time, and nickel top-seed-layer thickness. Thin films produced under optimal annealing conditions are measured to have crystallization efficiency of about 98%, which is full crystallization. Residual stress analysis reveals clear stress reduction with prolonged annealing time and Ni capping layer thickness. A very low tensile stress of about 87 MPa is achieved. The relationships between optimal crystallization temperature, crystallization time, and Ni-layer thickness are described.