| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362433 | Applied Surface Science | 2009 | 6 Pages |
Abstract
The properties of GaAs/AlGaAs solar cells irradiated with 40, 70, 100 and 170Â keV protons have been studied. Current-voltage (IV) measurement showed that the worst degradation was found in the cells irradiated by 100Â keV protons. The degradation was found defect dependent. Defect profile was obtained by the stopping and range of ions in matter (SRIM) simulation and deep-level transient spectroscopy (DLTS) measurement. In order to obtain the deep-level defect profile in depletion layer by DLTS measurement, the traditional calculation formula of defect concentration has been modified. DLTS measurement showed good agreement with that of the SRIM simulation.
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Authors
Fenfen Zhan, Jianmin Hu, Yifan Zhang, Fang Lu,