Article ID Journal Published Year Pages File Type
5362468 Applied Surface Science 2012 4 Pages PDF
Abstract
► Phase diagram of Ar+ bombarded Si surfaces in the linear regime of surface dynamics. ► Holes and perpendicular mode ripples are caused by multiple scattering events. ► Only ultra-smooth stable silicon surfaces are for incidence angles < 50° from normal. ► Phase diagram characterized by diverging wavelength phase transition.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Multiple scattering causes the low energy-low angle constant wavelength topographical instability of argon ion bombarded silicon surfaces
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