| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362473 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠This paper deals with 60 keV argon ion induced evolution of ripple morphology on silicon surface at room temperature. ⺠A large angular window (0-75°), in terms of ion incident angle, was chosen for this study. ⺠Ripple formation in the angular window of 45°-75°. Ripple wavelength decreases with increasing incident angle. ⺠The results are attributed to the viscous flow mechanism.
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Authors
Sandeep Kumar Garg, V. Venugopal, T. Basu, O.P. Sinha, S. Rath, D. Kanjilal, T. Som,