| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362475 | Applied Surface Science | 2012 | 4 Pages |
Abstract
⺠Effect of angle of ion incidence and ion fluence on the surface nanostructures formed due to 60 keV Ar+-ion beam sputtering of p-type GaAs(1 0 0) is examined using an ion current density of 10-12 μA/cm2. ⺠As a function of angle of incidence the surface topography changes from 'dots + holes' (0°) â 'smooth' (30°) â 'dots' (60°). For 60° off-normal ion incidences ripple formation is suppressed. ⺠Effectiveness and limitations of existing theories of ion induced pattern formation to explain the observed nanostructures are discussed.
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Authors
V. Venugopal, Sandeep Kumar Garg, Tanmoy Basu, Om Prakash Sinha, D. Kanjilal, S.R. Bhattacharyya, T. Som,