Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5362528 | Applied Surface Science | 2009 | 4 Pages |
Abstract
GaN layer on c-plane misoriented sapphire, grown by metal organic chemical vapor deposition, has been studied. It was observed that the random and non-uniform distribution of the step was caused by the step reconstruction for GaN grown on 0° sapphire by atomic force microscopy. The image quality parameter analysis of electron back-scatter diffraction indicated that the strains were reduced for GaN grown on 0.2° and 0.3° sapphire, and optical and electrical properties were improved. The electroluminescence intensity of LED grown on 0.2° and 0.3° sapphire was 2 times as that of 0° sapphire.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xing Yanhui, Han Jun, Deng Jun, Li Jianjun, Xu Chen, Shen Guangdi,