| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362532 | Applied Surface Science | 2009 | 4 Pages |
Abstract
ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.
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Authors
Dongmei Zhu, Kun Li, Fa Luo, Wancheng Zhou,