| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362653 | Applied Surface Science | 2010 | 4 Pages |
Abstract
A low-temperature passivation method for GaAs surfaces is investigated. Ultrathin AlN layers are deposited by plasma-enhanced atomic-layer-deposition at 200 ° C on top of near-surface InGaAs/GaAs quantum well structures. A significant passivation effect is seen as shown by up to 30 times higher photoluminescence intensity and up to seven times longer lifetime compared to uncoated reference samples. The improved optical properties are accompanied by a redshift of the quantum well photoluminescence peak likely caused by a combination of the nitridation of the GaAs capping layer and a surface coupling effect.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. Bosund, P. Mattila, A. Aierken, T. Hakkarainen, H. Koskenvaara, M. Sopanen, V.-M. Airaksinen, H. Lipsanen,