Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5362698 | Applied Surface Science | 2010 | 4 Pages |
Abstract
Cleaning the surfaces of the as-deposited Ge2Sb2Te5 was studied by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). The mixed native oxides on the as-deposited Ge2Sb2Te5 surface can be easily removed by dipping Ge2Sb2Te5 in de-ionized water for 1 min, while the surface morphology remains unchanged after cleaning. Native oxides only re-grow after exposure to air for more than 4 min. Although dipping in water leads to a surface layer deficient in Ge and Sb, the surface composition of Ge2Sb2Te5 can recover to its stoichiometric value after annealing at 200 °C in vacuum. The phase remains amorphous at room temperature after dipping in water, and changes to fcc and hcp after annealing at 100 and 220 °C, respectively.
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Authors
Zheng Zhang, Jisheng Pan, Yong Lim Foo, Lina Wei-Wei Fang, Yee-Chia Yeo, Rong Zhao, Luping Shi, Tow-Chong Chong,