| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362765 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠The resistivity of the ZnO films can significantly decrease by Si-doped. ⺠The bandgap of the film increases to 3.52 eV when Si concentration is of 6%. ⺠Yellow emission enhances due to the increase of extrinsic impurity or defects. ⺠The maximum magnetic moment of 2.6 μB/Si is obtained.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.T. Luo, X.Y. Zhu, G. Chen, F. Zeng, F. Pan,