Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5362830 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Zn1âxCoxO (0 â¤Â x â¤Â 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn1âxCoxO (0 â¤Â x â¤Â 0.15) films were investigated by X-ray diffraction (XRD), ultraviolet-visible spectrometer and X-ray photoelectron spectroscopy (XPS). XRD results show that the Zn1âxCoxO films retained a hexagonal crystal structure of ZnO with better c-axis preferred orientation compared to the undoped ZnO films. The optical absorption spectra suggest that the optical band-gap of the Zn1âxCoxO thin films varied from 3.26 to 2.79 eV with increasing Co content from x = 0 to x = 0.15. XPS studies show the possible oxidation states of Co in Zn1âxCoxO (0 â¤Â x â¤Â 0.05), Zn0.90Co0.10O and Zn0.85Co0.15O are CoO, Co3O4 and Co2O3, with an increase of Co content, respectively.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Ling Wei, Zonghui Li, W.F. Zhang,