| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362894 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠A higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate. ⺠Larger Ni2Si or NiSi grains form on Si(1 1 0) substrate. ⺠Characteristics of NiSi/n-Si(1 1 0) Schottky contacts are inferior to that of NiSi/n-Si(1 0 0) Schottky contacts.
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Authors
Xiao Guo, Hao Yu, Yu-Long Jiang, Guo-Ping Ru, David Wei Zhang, Bing-Zong Li,