| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362909 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠Al atoms are introduced in Sb2Te3 phase change material in order to improve the thermal stability. ⺠The data retention temperature at 10 years is up to 110 °C, much better than the Ge2Sb2Te5 material. ⺠The additional Al-Sb and Al-Te bonds within Sb2Te3 lead to better thermal stability. ⺠Phase-change memory cell based on Al0.69Sb2Te3 can be triggered by a nanosecond magnitude pulse between amorphous and crystalline states.
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Authors
Cheng Peng, Liangcai Wu, Zhitang Song, Feng Rao, Min Zhu, Xuelai Li, Bo Liu, Limin Cheng, Songlin Feng, Pingxiong Yang, Junhao Chu,