| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362941 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠Ni as catalyst, high-quality GaN nanowires films were synthesized by chemical vapor deposition (CVD). ⺠The open electric field of the sample1 was 9.1 V/μm. ⺠The field emission properties of GaN nanowires films are related to the roughness and density of the nanowires in the film.
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Authors
Enling Li, Zhen Cui, Yuanbin Dai, Danna Zhao, Tao Zhao,