Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5362984 | Applied Surface Science | 2008 | 5 Pages |
Abstract
We demonstrate the possibility to use near field optics to perform two-dimensional dopant profiling on silicon surface, with deep submicron spatial resolution. The sample surface is contacted by an aqueous electrolyte giving a reverse biased junction that is illuminated by a subwavelength optical source, in near filed conditions. A staircase calibration structure was used with several boron-doped layers with either 4 μm or 0.4 μm thickness and doping between 1017 and 1020 at/cm3. Measurements were performed on the sample cross section. It is shown that photocurrent surface mapping shows up the doped areas with a lateral resolution better than 100 nm.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Mustapha Djebbouri, François Bertin, Naziha Kesri, Ahmad Bsiesy,