Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363008 | Applied Surface Science | 2008 | 4 Pages |
Abstract
The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 1014 and 3 Ã 1020 cmâ3 by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of â¼0.7 could be controlled between 5 Ã 10â3 and 104 Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm2 Vâ1 sâ1.The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.
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Authors
Wantae Lim, Yu-Lin Wang, F. Ren, D.P. Norton, I.I. Kravchenko, J.M. Zavada, S.J. Pearton,