Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363029 | Applied Surface Science | 2010 | 4 Pages |
Abstract
Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0 0 1) hetero-structure. The results are discussed as a function of the annealing temperature of sample and show that the diffusion process at the interfaces starts for annealing temperatures above 200 °C without detectable modification of the oxide layer.
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Authors
T. El Asri, M. Raissi, S. Vizzini, A. El Maachi, E.L. Ameziane, F. Arnaud d'Avitaya, J.-L. Lazzari, C. Coudreau, H. Oughaddou, B. Aufray, A. Kaddouri,