| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363032 | Applied Surface Science | 2010 | 4 Pages |
Abstract
VO2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285Â s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340Â K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xiaofeng Xu, Anyuan Yin, Xiliang Du, Jiqing Wang, Jiading Liu, Xinfeng He, Xingxing Liu, Yilong Huan,