| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363130 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠Pronounced gap states were yielded in partially reduced MoO3 (MoOx) interlayer. ⺠A barrier of 0.45 eV was derived for electron extraction from FePc to MoOx smaller than to MoO3. ⺠The energy level alignment diagrams were obtained for the FePc/MoO3 and FePc/MoOx interfaces. ⺠The nominal thickness was optimized to be 3 nm for MoO3 interlayer.
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Authors
L.Y. Liu, L. Wan, L. Cao, Y.Y. Han, W.H. Zhang, T.X. Chen, P.P. Guo, K. Wang, F.Q. Xu,