Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363239 | Applied Surface Science | 2008 | 5 Pages |
Carbon dioxide ions with 29Â keV energy were implanted into (4Â 0Â 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1Â ÃÂ 1016 and 3Â ÃÂ 1018Â ions/cm2. X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.