Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films

Zinc nitride (Zn3N2) thin films are prepared using pulsed laser deposition (PLD) from zinc selenide (ZnSe) target at different nitrogen ambient pressures viz. 1, 3, 5, 7 and 10 Pa. The films prepared with nitrogen pressures 1 and 3 Pa are amorphous in nature, whereas the films prepared at 5, 7 and 10 Pa exhibit the presence of cubic bixbyite Zn3N2 structure with lattice parameter very close to bulk of Zn3N2. The particle size calculated by Debye Scherrer's formula is in the nano regime. Surface morphology of the films is studied by SEM and AFM analysis. Optical parameters such as band gap, refractive index and porosity of the films are calculated. Moreover, the present study confers an outlook about how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition.

► Preparation of discontinuous nanostructured Zn3N2 thin films from ZnSe target by pulsed laser deposition under nitrogen ambience. ► The study confers an outlook on how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition. ► Optical band gap, refractive index and porosity of the Zn3N2 films are calculated.