| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363330 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠We examine changes of the structure for HfSiO and HfSiON film with different annealing temperature by photoelectron spectroscopy. ⺠Core level photoelectron spectra have revealed the mechanism of metallization reaction at the bottom interface between the HfSiO(N) film and Si substrate under vacuum annealing. ⺠We find that Silicidation action occurs by annealing at 850 and 900°C for HfSiO and HfSiON film, respectively.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
X.M. Yang, T. Yu, X.M. Wu, L.J. zhuge, S.B. Ge, J.J. He,