| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363354 | Applied Surface Science | 2011 | 6 Pages |
Abstract
⺠Oxidation of SiGeC blanket layers for Ge enrichment is studied with ToF-SIMS. ⺠An original quantification protocol, the extended Full Spectrum protocol, is used. ⺠Improvements brought by this protocol over more classic ones are highlighted. ⺠This study yields useful information for comprehension of the oxidation mechanisms.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. Py, E. Saracco, J.F. Damlencourt, J.P. Barnes, J.M. Fabbri, J.M. Hartmann,