| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363394 | Applied Surface Science | 2011 | 7 Pages |
Abstract
⺠Growth and nucleation behavior of Ir films grown by ALD on different interfacial layers were investigated. ⺠The Ir film grown on the 3-nm-thick TaN surface showed the smoothest and most uniform layer for all the deposition cycles. ⺠Poor nucleation and three-dimensional island-type growth of the Ir layer were observed on Si, SiO2, and surface-treated TaN. ⺠Growth behavior of the Ir layer on different interface layer is related to the chemical bonding pattern of interface layer.
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Authors
Bum Ho Choi, Jong Ho Lee, Hong Kee Lee, Joo Hyung Kim,