| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363452 | Applied Surface Science | 2013 | 5 Pages |
Stoichiometric and partially reduced ceria films were deposited on preoxidized Ru(0Â 0Â 0Â 1) crystal by Ce evaporation in oxygen atmosphere of different pressures at 700 K. Copper-ceria interaction was investigated by deposition of metalic copper on both types of substrate. The samples were characterized by low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) of core states and resonant photoelectron spectroscopy (RPES) of the valence bands. Copper adsorption on stoichiometric ceria caused reduction of CeO2, while on the oxygen-defficient ceria it partially reoxidized the substrate. This is in agreement with DFT+U calculations of copper adsorption on stoichiometric and defective ceria surfaces.
⺠Copper-ceria system as model catalyst. ⺠Cu was deposited on stoichiometric and partially reduced ceria surfaces on Ru(0 0 0 1). ⺠Reduction of stoichiometric ceria was observed upon copper deposition. ⺠Copper reoxidates partially reduced ceria surface. ⺠Described copper-ceria interaction predicted by DFT+U calculations.
