| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363458 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠Si crystals appear to be larger and uniform when Si is grown on SiO2 covered with an array of Ge islands. ⺠Si crystals grown on SiO2 have a rounded shape at the surface, indicating the presence of high concentration of threading dislocations. ⺠Si crystals grown on SiO2 at temperatures in the 430-550 °C range produce photoluminescence in the 1.5 μm region.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A.A. Shklyaev, A.S. Kozhukhov, V.A. Armbrister, D.V. Gulyaev,