Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363486 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠The impact of 15 nm Schottky gate contact layer based on conductive Ir oxides grown by RTA in O2 ambient at 500 °C for 1 and 10 min. ⺠X-ray diffraction and depth profiles of SIMS revealed the mixture of Ir and Ir oxides (IrO, IrO2) that have not been formed in the whole gate contact layer thickness. ⺠Ir oxides based gate contact layers for design of thermally stable HEMT devices with an enhancement mode of operation could be available.
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Authors
Martin Vallo, Tibor Lalinský, Edmund DobroÄka, Gabriel Vanko, Andrej Vincze, Ivan Rýger,