| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363497 | Applied Surface Science | 2013 | 6 Pages |
Abstract
⺠We can fabricate sensing membrane layer from TiN with low drift rate. ⺠The EIS device incorporating TiN film annealed at 850 °C exhibited a highest sensitivity. ⺠pH-sensing device fabrication process is fully compatible with CMOS technology.
Related Topics
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Physical and Theoretical Chemistry
Authors
W. Bunjongpru, A. Sungthong, S. Porntheeraphat, Y. Rayanasukha, A. Pankiew, W. Jeamsaksiri, A. Srisuwan, W. Chaisriratanakul, E. Chaowicharat, N. Klunngien, C. Hruanun, A. Poyai, J. Nukeaw,