Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure

Article ID	Journal	Published Year	Pages	File Type
5363617	Applied Surface Science	2011	4 Pages	PDF

Abstract

âº AlSiON/4H-SiC and conventional thermal oxidized SiOx/SiC have interfacial roughness. âº Inserting AlN film between AlSiON and SiC decreases the roughness of SiC surface. âº The roughness of AlN/SiC interface is less than that of half of the SiOx/SiC. âº C-V characteristics on AlSiON/AlN/SiC are improved by depositing temperature of AlN. âº AlSiON/AlN/SiC structure is one of attractive MIS structures for SiC devices.

Keywords

Aln High temperature Power device Wide bandgap Buffer layer MOSFET

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure

Authors

Naoyoshi Komatsu, Tomohisa Satoh, Masatomo Honjo, Takashi Futatuki, Keiko Masumoto, Chiharu Kimura, Hidemitsu Aoki,