Article ID Journal Published Year Pages File Type
5363622 Applied Surface Science 2011 7 Pages PDF
Abstract
► Single doping ZnO using indium and co-doping using indium and fluorine were done. ► Ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes. The co-doped films had (0 0 2) and (1 0 1) planes. ► Lowest resistivity (2 × 10−3 Ω cm) was achieved for 1% Indium through in-situ method. ► Ex-situ doped and co-doped ZnO films showed two PL peaks; near band edge emission and blue-green emission. In-situ doped ZnO exhibited only the near band edge emission.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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