Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363622 | Applied Surface Science | 2011 | 7 Pages |
Abstract
⺠Single doping ZnO using indium and co-doping using indium and fluorine were done. ⺠Ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes. The co-doped films had (0 0 2) and (1 0 1) planes. ⺠Lowest resistivity (2 Ã 10â3 Ω cm) was achieved for 1% Indium through in-situ method. ⺠Ex-situ doped and co-doped ZnO films showed two PL peaks; near band edge emission and blue-green emission. In-situ doped ZnO exhibited only the near band edge emission.
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Authors
T.V. Vimalkumar, N. Poornima, K.B. Jinesh, C. Sudha Kartha, K.P. Vijayakumar,