Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se)2 thin films

► This paper describes an interesting analysis of the dependence of the incorporation of S during the sulphurization step of electrodeposited CuInSe2 precursors on the Cu/In ratio, proposing a mechanism related to the presence of Cu-(Se,S) phases in the layers during the process. ► The data are of interest, as they contribute to deepen in the understanding of these processes that are relevant for the synthesis of CuIn(S,Se)2 alloys with controlled composition. ► These results should contribute to the progress in band gap engineering of absorber CuInSe2 film by adding S and hence to improve conversation efficiency of such solar cells.