| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363644 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠We observed a significant enhancement of saturation magnetization of Cr ion implanted silicon after annealing at 900 °C. ⺠We proposed a mechanism to explain the enhancement of magnetism. ⺠Cr implantation dosage can affect the magnetic properties.
Related Topics
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Physical and Theoretical Chemistry
Authors
Shuang Yang, Wenyong Zhang, Jihong Chen, Zhongpo Zhou, Zhiwei Ai, Liping Guo, Congxiao Liu, Honglin Du,