Article ID Journal Published Year Pages File Type
5363684 Applied Surface Science 2011 6 Pages PDF
Abstract
► Enhanced growth of low-resistivity NiSi nanodot arrays on (0 0 1)Si0.7Ge0.3 has been achieved by using a novel Ni/amorphous-Si(a-Si) bilayer nanodot structure. ► The size, interspacing, and shape of the low-resistivity NiSi nanodots remain almost unchanged even after annealing as high as 800 °C. ► The presence of the a-Si interlayer was found to effectively prevent Ge segregation and maintain the interface stability in forming NiSi nanodots on Si0.7Ge0.3 substrate. ► 10-45 nm-diameter amorphous SiOx nanowires were found to grow on the 900 °C annealed nanodots sample.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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