Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363684 | Applied Surface Science | 2011 | 6 Pages |
Abstract
⺠Enhanced growth of low-resistivity NiSi nanodot arrays on (0 0 1)Si0.7Ge0.3 has been achieved by using a novel Ni/amorphous-Si(a-Si) bilayer nanodot structure. ⺠The size, interspacing, and shape of the low-resistivity NiSi nanodots remain almost unchanged even after annealing as high as 800 °C. ⺠The presence of the a-Si interlayer was found to effectively prevent Ge segregation and maintain the interface stability in forming NiSi nanodots on Si0.7Ge0.3 substrate. ⺠10-45 nm-diameter amorphous SiOx nanowires were found to grow on the 900 °C annealed nanodots sample.
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Authors
S.L. Cheng, C.Y. Zhan, S.W. Lee, H. Chen,