| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363685 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠3.7 μm Al0.91Ga0.09N epilayers was grown on sapphire (0 0 0 1) substrates by PALE. ⺠The crystalline quality of sample is better. ⺠The sample's Raman spectrum supports the results that asymmetric photoluminescence peak is caused by the exciton-phonon coupling. ⺠Deep ultraviolet photoluminescence spectroscopy and Raman scattering spectroscopy analysis show that there possibly exists a high density of deeper localized state (â¼90 meV) as the center of radiative recombination.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xu Pan, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Cuibai Yang, Wei Li, Weiying Wang, Peng Jin, Zhanguo Wang,