Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363706 | Applied Surface Science | 2010 | 4 Pages |
The electronic structure and interfacial chemistry of thin manganese films on p-Si (1Â 0Â 0) have been studied by photoelectron spectroscopy measurements using synchrotron radiation of 134Â eV and from X-ray diffraction data. The Mn/p-Si structures have been irradiated from swift heavy ions (â¼100Â MeV) of Fe7+ with a fluence of 1Â ÃÂ 1014Â ions/cm2. Evolution of valence band spectrum with a sharp Fermi edge has been obtained. The observed Mn 3d peak has been related to the bonding of Mn 3d-Si 3sp states. Mn 3p (46.4Â eV), Mn 3s (81.4Â eV) and Si 2p (99.5Â eV) core levels have also been observed which show a binding energy shift towards lower side as compared to their corresponding elemental values. From the photoelectron spectroscopic and X-ray diffraction results, Mn5Si3 metallic phase of manganese silicide has been found. The silicide phase has been found to grow on the irradiation.