| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363732 | Applied Surface Science | 2010 | 4 Pages |
Abstract
Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.
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Authors
Naoyoshi Komatsu, Keiko Masumoto, Hidemitsu Aoki, Chiharu Kimura, Takashi Sugino,