Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363783 | Applied Surface Science | 2007 | 4 Pages |
Abstract
The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm2 by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 °C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing.
Keywords
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Chemistry
Physical and Theoretical Chemistry
Authors
Jianke Yao, Jianda Shao, Hongbo He, Zhengxiu Fan,