| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363825 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠We report the structural and electrical characteristics of nitrided hafnium oxide (HfO2) gate dielectrics. ⺠The nitridation process was conducted in the remote NH3 plasma at a low temperature under various radio-frequency powers. ⺠Significant decrease in the capacitance equivalent thickness, leakage current density, and interfacial layer thickness of the nitrided HfO2 gate dielectrics were achieved. ⺠The enhancement and decrease of the photoluminescence intensity from Si was also observed as a result of the hydrogen passivation and depassivation effects at the HfO2/Si interface.
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Authors
Li-Tien Huang, Ming-Lun Chang, Jhih-Jie Huang, Hsin-Chih Lin, Chin-Lung Kuo, Min-Hung Lee, Chee Wee Liu, Miin-Jang Chen,