Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

► ZnO thin film was deposited by RF. plasma-enhanced pulsed laser deposition. ► The depositions were performed at room temperature under low-vacuum conditions. ► The oxygen pressure reduced defects effectively and increased the deposition rate.