Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363902 | Applied Surface Science | 2008 | 4 Pages |
Abstract
Al-N co-doped ZnO films were fabricated by gaseous ammonia annealing at various temperatures. The structure and the electrical properties of Al-N-doped ZnO films strongly depend on the annealing temperature. XRD and SEM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (â¼85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with high carrier concentration of 8.3 Ã 1018 cmâ3 and low resistivity of 25.0 Ω cm when the annealing temperature is 700 °C. Also the growth process of Al-N co-doped at various temperatures is discussed in detail.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
Li-Dan Tang, Yue Zhang, Xiao-Qin Yan, You-Song Gu, Zi Qin, Ya Yang,