Article ID Journal Published Year Pages File Type
5363902 Applied Surface Science 2008 4 Pages PDF
Abstract

Al-N co-doped ZnO films were fabricated by gaseous ammonia annealing at various temperatures. The structure and the electrical properties of Al-N-doped ZnO films strongly depend on the annealing temperature. XRD and SEM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (∼85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with high carrier concentration of 8.3 × 1018 cm−3 and low resistivity of 25.0 Ω cm when the annealing temperature is 700 °C. Also the growth process of Al-N co-doped at various temperatures is discussed in detail.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
, , , , , ,