| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5363924 | Applied Surface Science | 2008 | 5 Pages |
Abstract
The effect of different annealing methods on the sheet resistance of indium tin oxide (ITO) on polyimide (PI) substrate has been investigated. ITO thin films were prepared by RF magnetron sputtering in pure Ar gas and electro-annealing, this was carried out in the flow of an electric current at several temperatures between 100 and 180 °C in air. Electro- and thermal annealing were compared in order to confirm differences between the electrical, optical and microstructural properties of the ITO thin films. As electro-annealing induced the predominant growth of crystallites of ITO thin films along (4 0 0) plane, the sheet resistance of ITO films that were electro-annealed for 2 mA at 180 °C considerably decreased from 50 to 28 Ω/cm2.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Dong-ho Lee, Shang-hun Shim, Jin-sik Choi, Keun-byoung Yoon,