Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363933 | Applied Surface Science | 2008 | 4 Pages |
Abstract
Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1Â 1Â 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jinhua Chen, Chengshan Xue, Huizhao Zhuang, Lixia Qin, Hong Li, Zhaozhu Yang,