Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5363951 | Applied Surface Science | 2008 | 8 Pages |
Abstract
The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50Â keV) Si+ beam at fluences in the range from 1013 to 1017Â cmâ2 was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si+-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Georgi B. Hadjichristov, Victor Ivanov, Eric Faulques,